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Optical properties of GaN nanopillar and nanostripe arrays with embedded InGaN/GaN multi quantum wells

Identifieur interne : 007393 ( Main/Repository ); précédent : 007392; suivant : 007394

Optical properties of GaN nanopillar and nanostripe arrays with embedded InGaN/GaN multi quantum wells

Auteurs : RBID : Pascal:07-0284058

Descripteurs français

Pascal (Inist)
- Propriété optique, Lithographie, Gravure ionique réactive, Endommagement, Recuit, Optimisation, Photoluminescence, Résolution angulaire, Gallium nitrure, Nanostructure, Indium nitrure, Puits quantique multiple, GaN, InGaN, 7867D.

English descriptors

KwdEn :
- Angular resolution, Annealing, Damage, Gallium nitrides, Indium nitrides, Lithography, Multiple quantum well, Nanostructures, Optical properties, Optimization, Photoluminescence, Reactive ion etching.

Abstract

GaN nanopillar and nanostripe arrays with embedded InGaN/GaN multi quantum wells (MQWs) were fabricated from planar wafers with different quantum well widths using holographic lithography and subsequent reactive ion etching. Although the etching process led to a reduction in the MQW related luminescence, the etch related damage was successfully healed through annealing in NH₃/N₂ mixtures under optimized conditions, and the annealed nanopatterned samples exhibited enhanced photoluminescence (PL) compared to the planar wafers. Angular-resolved PL measurements revealed extraction of guided modes from the nanopillar and nanostripe arrays.

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<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Angular resolution</term>
<term>Annealing</term>
<term>Damage</term>
<term>Gallium nitrides</term>
<term>Indium nitrides</term>
<term>Lithography</term>
<term>Multiple quantum well</term>
<term>Nanostructures</term>
<term>Optical properties</term>
<term>Optimization</term>
<term>Photoluminescence</term>
<term>Reactive ion etching</term>
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<keywords scheme="Pascal" xml:lang="fr"><term>Propriété optique</term>
<term>Lithographie</term>
<term>Gravure ionique réactive</term>
<term>Endommagement</term>
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<term>Indium nitrure</term>
<term>Puits quantique multiple</term>
<term>GaN</term>
<term>InGaN</term>
<term>7867D</term>
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<front><div type="abstract" xml:lang="en">GaN nanopillar and nanostripe arrays with embedded InGaN/GaN multi quantum wells (MQWs) were fabricated from planar wafers with different quantum well widths using holographic lithography and subsequent reactive ion etching. Although the etching process led to a reduction in the MQW related luminescence, the etch related damage was successfully healed through annealing in NH<sub>3</sub>
/N<sub>2</sub>
 mixtures under optimized conditions, and the annealed nanopatterned samples exhibited enhanced photoluminescence (PL) compared to the planar wafers. Angular-resolved PL measurements revealed extraction of guided modes from the nanopillar and nanostripe arrays.</div>
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<fC01 i1="01" l="ENG"><s0>GaN nanopillar and nanostripe arrays with embedded InGaN/GaN multi quantum wells (MQWs) were fabricated from planar wafers with different quantum well widths using holographic lithography and subsequent reactive ion etching. Although the etching process led to a reduction in the MQW related luminescence, the etch related damage was successfully healed through annealing in NH<sub>3</sub>
/N<sub>2</sub>
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Optical properties of GaN nanopillar and nanostripe arrays with embedded InGaN/GaN multi quantum wells

Optical properties of GaN nanopillar and nanostripe arrays with embedded InGaN/GaN multi quantum wells

Descripteurs français

English descriptors

Abstract

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